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ZnO nanorods for electronic nanodevice applications

Gyu-Chul Yi, / Won Il Park, / H.-J. Kim, / C.-H. Lee,

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm²/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

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ZnO nanorods for electronic nanodevice applications

Gyu-Chul Yi, / Won Il Park, / H.-J. Kim, / C.-H. Lee,

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm²/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

ZnO nanorods for electronic nanodevice applications

Gyu-Chul Yi, / Won Il Park, / H.-J. Kim, / C.-H. Lee,

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm²/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

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Titel:

ZnO nanorods for electronic nanodevice applications

Beteiligte:

Gyu-Chul Yi, (Autor:in) / Won Il Park, (Autor:in) / H.-J. Kim, (Autor:in) / C.-H. Lee, (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 164-165

Erscheinungsdatum:

01.10.2006

Format / Umfang:

639358 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388728

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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