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Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sanghoon Lee, / Shin, D. Y. / Liu, X. / Furdyna, J. K.

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor

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Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sanghoon Lee, / Shin, D. Y. / Liu, X. / Furdyna, J. K.

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor

Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Sanghoon Lee, / Shin, D. Y. / Liu, X. / Furdyna, J. K.

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor

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Titel:

Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Beteiligte:

Sanghoon Lee, (Autor:in) / Shin, D. Y. (Autor:in) / Liu, X. (Autor:in) / Furdyna, J. K. (Autor:in)

Erschienen in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 234-235

Erscheinungsdatum:

01.10.2006

Format / Umfang:

422893 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388851

Medientyp:

Aufsatz (Konferenz)

Format:

Elektronische Ressource

Sprache:

Englisch

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