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Magnetization correlations in lateral NiFe/Sb/NiFe spin valve devices
We have presented measurements of spin transport in Antimony (Sb) which is an important electronic material for IIIV semiconductors. Antimony films have been used for a conducting channel between two ferromagnetic electrodes in a lateral spin valve device. The Sb films show a metallic behavior in temperature dependence of resistivity. We demonstrate the first evidence of correlations of magnetization through the Sb channel in lateral NiFe/Sb/NiFe spin valve devices. A clear spin valve effect and the memory effect have been observed in a measurement using the conventional 4-probe geometry. The memory effect ensures that the observed spin valve signal originates from the spin polarized current in the Sb film.
Magnetization correlations in lateral NiFe/Sb/NiFe spin valve devices
We have presented measurements of spin transport in Antimony (Sb) which is an important electronic material for IIIV semiconductors. Antimony films have been used for a conducting channel between two ferromagnetic electrodes in a lateral spin valve device. The Sb films show a metallic behavior in temperature dependence of resistivity. We demonstrate the first evidence of correlations of magnetization through the Sb channel in lateral NiFe/Sb/NiFe spin valve devices. A clear spin valve effect and the memory effect have been observed in a measurement using the conventional 4-probe geometry. The memory effect ensures that the observed spin valve signal originates from the spin polarized current in the Sb film.
Magnetization correlations in lateral NiFe/Sb/NiFe spin valve devices
Seong-Hoon Kim, (Autor:in) / Jonghwa Eom, (Autor:in) / Joonyeon Chang, (Autor:in) / Suk-Hee Han, (Autor:in)
01.10.2006
356085 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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