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Recent advances in high-voltage SiC power devices
The present status of high-voltage SiC semiconductor switching devices is reviewed. The figures of merit that have been used for unipolar and bipolar devices to quantify the intrinsic performance improvement over silicon are presented. The choice and design of several key device structures are discussed. The performance expectations of the major two- and three-terminal unipolar and bipolar devices in 4H-SiC are presented. The recent rapid development of SiC material and process technology is described. The progress in high-voltage power device experimental demonstration is reviewed. The material and process technology issues that must be addressed for device commercialization are discussed.
Recent advances in high-voltage SiC power devices
The present status of high-voltage SiC semiconductor switching devices is reviewed. The figures of merit that have been used for unipolar and bipolar devices to quantify the intrinsic performance improvement over silicon are presented. The choice and design of several key device structures are discussed. The performance expectations of the major two- and three-terminal unipolar and bipolar devices in 4H-SiC are presented. The recent rapid development of SiC material and process technology is described. The progress in high-voltage power device experimental demonstration is reviewed. The material and process technology issues that must be addressed for device commercialization are discussed.
Recent advances in high-voltage SiC power devices
Chow, T.P. (Autor:in) / Ramungul, N. (Autor:in) / Ghezzo, M. (Autor:in)
01.01.1998
1129514 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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