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Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications
First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxial Fe-Co(001)/MgO(001)/Fe-Co(001) MTJs and textured CoFeB/MgO(001)/CoFeB MTJs and achieved giant MR ratios above 400% at room temperature. An ultra-low resistance-area (RA) product indispensable for magnetic sensor application has also been achieved in CoFeB/MgO(001)/CoFeB MTJs. The giant TMR effect in MgO-based MTJs is the key for next-generation spintronic devices.
Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications
First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxial Fe-Co(001)/MgO(001)/Fe-Co(001) MTJs and textured CoFeB/MgO(001)/CoFeB MTJs and achieved giant MR ratios above 400% at room temperature. An ultra-low resistance-area (RA) product indispensable for magnetic sensor application has also been achieved in CoFeB/MgO(001)/CoFeB MTJs. The giant TMR effect in MgO-based MTJs is the key for next-generation spintronic devices.
Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications
Shinji Yuasa, (Autor:in) / Rie Matsumoto, (Autor:in) / Akio Fukushima, (Autor:in) / Hitoshi Kubota, (Autor:in) / Taro Nagahama, (Autor:in) / Djayaprawira, David D. (Autor:in) / Koji Tsunekawa, (Autor:in) / Hiroki Maehara, (Autor:in) / Yoshinori Nagamine, (Autor:in) / Motonobu Nagai, (Autor:in)
01.10.2006
532158 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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