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Orbital quantum bit in Si quantum dots
In this paper, current status of experimental and theoretical work on quantum bits based on the semiconductor quantum dots in the University of Seoul will be presented. A new proposal utilizing the multi-valley quantum state transitions in a Si quantum dot as a possible candidate for a quantum bit with a long decoherence time will be also given. Qubits are the multi-valley symmetric and anti-symmetric orbitals. Evolution of these orbitals is controlled by an external electric field, which turns on and off the inter-valley interactions. Initialization is achieved by turning on the inter-valley Hamiltonian to let the system settle down to the symmetric orbital state. Estimates of the decoherence time is made for the longitudinal acoustic phonon process.
Orbital quantum bit in Si quantum dots
In this paper, current status of experimental and theoretical work on quantum bits based on the semiconductor quantum dots in the University of Seoul will be presented. A new proposal utilizing the multi-valley quantum state transitions in a Si quantum dot as a possible candidate for a quantum bit with a long decoherence time will be also given. Qubits are the multi-valley symmetric and anti-symmetric orbitals. Evolution of these orbitals is controlled by an external electric field, which turns on and off the inter-valley interactions. Initialization is achieved by turning on the inter-valley Hamiltonian to let the system settle down to the symmetric orbital state. Estimates of the decoherence time is made for the longitudinal acoustic phonon process.
Orbital quantum bit in Si quantum dots
D. Ahn, (Autor:in) / S. W. Hwnag, (Autor:in)
01.10.2006
417719 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Spin and orbital Kondo effect in electrostatically coupled quantum dots
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