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Laser Induced Fluorescence Measurements in Plasma Etching Processes
Abstract We report the results of a laser induced fluorescence, (LIF), study of the CF and CF2 radicals in fluorocarbon plasmas used for the etching of Si and SiO2 features in integrated circuit manufacture. In pure CF4 at a pressure of 50 mTorr and at an r.f. power of 100 W delivered to a volume of ~ 2.21, the ground state fluorocarabon radicals are relatively unreactive in the gas phase. Physical removal, either by pumpout or reaction on the surface of the etching reactor, dominates the loss processes for CF and CF2. These processes are examined by measurement of the spatial variations of the radicals’ concentrations within the reactor, and also by their temporal variation after the discharge is rapidly switched off. The measurements are consistent with a sticking probability of 4×10-2 for CF2 radicals on the reactor surfaces.
Laser Induced Fluorescence Measurements in Plasma Etching Processes
Abstract We report the results of a laser induced fluorescence, (LIF), study of the CF and CF2 radicals in fluorocarbon plasmas used for the etching of Si and SiO2 features in integrated circuit manufacture. In pure CF4 at a pressure of 50 mTorr and at an r.f. power of 100 W delivered to a volume of ~ 2.21, the ground state fluorocarabon radicals are relatively unreactive in the gas phase. Physical removal, either by pumpout or reaction on the surface of the etching reactor, dominates the loss processes for CF and CF2. These processes are examined by measurement of the spatial variations of the radicals’ concentrations within the reactor, and also by their temporal variation after the discharge is rapidly switched off. The measurements are consistent with a sticking probability of 4×10-2 for CF2 radicals on the reactor surfaces.
Laser Induced Fluorescence Measurements in Plasma Etching Processes
Booth, J. P. (Autor:in) / Hancock, G. (Autor:in) / Perry, N. D. (Autor:in) / Toogood, M. J. (Autor:in)
01.01.1990
3 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
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