Stabilization of High-Tc Phase in Sputtered BiPbSrCaCuO Films by Post Anneal: Fid-Bau Portal

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Stabilization of High-Tc Phase in Sputtered BiPbSrCaCuO Films by Post Anneal

Yamamoto, H. / Katoh, M. / Tanaka, M. / Aoki, Y. / Maeda, K. / Shiono, T.

Abstract The post anneal was investigated for amorphous (Bi,Pb)2Sr2Ca2Cu3Ox films deposited on (100) planes of MgO at about 400°C. The films were annealed in a closed Pt crucible together with a sintered bulk including Pb to supply enough constituent metal atoms in vapor. Also the film surface was covered by a MgO plate to suppress a change of the film composition during anneal. The film which contained the high-Tc phase above 70 % was obtained and the maximum Tc of zero resistance attained up 105 K. The results obtained revealed that the addition of Pb and/or the reduced pressure of oxygen were effective to promote the growth of the high-Tc phase under the conditions ensuring the stoichiometry during anneal.

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Stabilization of High-Tc Phase in Sputtered BiPbSrCaCuO Films by Post Anneal

Yamamoto, H. / Katoh, M. / Tanaka, M. / Aoki, Y. / Maeda, K. / Shiono, T.

Abstract The post anneal was investigated for amorphous (Bi,Pb)2Sr2Ca2Cu3Ox films deposited on (100) planes of MgO at about 400°C. The films were annealed in a closed Pt crucible together with a sintered bulk including Pb to supply enough constituent metal atoms in vapor. Also the film surface was covered by a MgO plate to suppress a change of the film composition during anneal. The film which contained the high-Tc phase above 70 % was obtained and the maximum Tc of zero resistance attained up 105 K. The results obtained revealed that the addition of Pb and/or the reduced pressure of oxygen were effective to promote the growth of the high-Tc phase under the conditions ensuring the stoichiometry during anneal.

Stabilization of High-Tc Phase in Sputtered BiPbSrCaCuO Films by Post Anneal

Yamamoto, H. / Katoh, M. / Tanaka, M. / Aoki, Y. / Maeda, K. / Shiono, T.

Abstract The post anneal was investigated for amorphous (Bi,Pb)2Sr2Ca2Cu3Ox films deposited on (100) planes of MgO at about 400°C. The films were annealed in a closed Pt crucible together with a sintered bulk including Pb to supply enough constituent metal atoms in vapor. Also the film surface was covered by a MgO plate to suppress a change of the film composition during anneal. The film which contained the high-Tc phase above 70 % was obtained and the maximum Tc of zero resistance attained up 105 K. The results obtained revealed that the addition of Pb and/or the reduced pressure of oxygen were effective to promote the growth of the high-Tc phase under the conditions ensuring the stoichiometry during anneal.

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Titel:

Stabilization of High-Tc Phase in Sputtered BiPbSrCaCuO Films by Post Anneal

Beteiligte:

Yamamoto, H. (Autor:in) / Katoh, M. (Autor:in) / Tanaka, M. (Autor:in) / Aoki, Y. (Autor:in) / Maeda, K. (Autor:in) / Shiono, T. (Autor:in)

Erschienen in:

Advances in Cryogenic Engineering Materials ; 573-579

An International Cryogenic Materials Conference Publication ; 36

Erscheinungsdatum:

01.01.1990

Format / Umfang:

7 pages

ISBN:

978-1-4613-9882-0 , 978-1-4613-9880-6

ISSN:

DOI:

https://doi.org/10.1007/978-1-4613-9880-6_74

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Film Composition , Annealed Film , Post Anneal , Specimen Film , Metallic Vapor Chemistry , Biochemical Engineering , Characterization and Evaluation of Materials , Mechanical Engineering

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