Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Epitaxial Growth Studied by Surface X-Ray Diffraction
Abstract Epitaxial growth is intimately related to the presence of steps, islands and other forms of surface irregularity. The characterisation of atomic disorder at a surface is therefore central to our understanding of the nature and kinetics of adsorption and, ultimately, to the successful growth of semiconductor structures by molecular beam epitaxy. Surface sensitive diffraction techniques can provide important statistical information about disorder over a wide spatial region. Electron diffraction: LEED and RHEED [1,2] has been used for this but the interpretation is inevitably confused by consideration of the role of multiple scattering. X-ray diffraction, on the other hand, may be interpreted within the kinematical approximation and, with the development of intense synchrotron radiation sources, is finding increasing application in the field of surface crystallography.
Epitaxial Growth Studied by Surface X-Ray Diffraction
Abstract Epitaxial growth is intimately related to the presence of steps, islands and other forms of surface irregularity. The characterisation of atomic disorder at a surface is therefore central to our understanding of the nature and kinetics of adsorption and, ultimately, to the successful growth of semiconductor structures by molecular beam epitaxy. Surface sensitive diffraction techniques can provide important statistical information about disorder over a wide spatial region. Electron diffraction: LEED and RHEED [1,2] has been used for this but the interpretation is inevitably confused by consideration of the role of multiple scattering. X-ray diffraction, on the other hand, may be interpreted within the kinematical approximation and, with the development of intense synchrotron radiation sources, is finding increasing application in the field of surface crystallography.
Epitaxial Growth Studied by Surface X-Ray Diffraction
Macdonald, J. E. (Autor:in) / Norris, C. (Autor:in) / Vlieg, E. (Autor:in) / Gon, A. Denier (Autor:in) / Veen, J. F. (Autor:in)
01.01.1988
5 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
British Library Online Contents | 1993
|Cubic SiC Surface Structure Studied by X-Ray Diffraction
British Library Online Contents | 2003
|Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles
British Library Online Contents | 2010
|The Epitaxial Growth of Nickel on Cu(100) Studied by Ion Channeling
Springer Verlag | 1988
|In Situ Studies of Epitaxial Growth by Synchrotron X-Ray Diffraction
British Library Online Contents | 2006
|