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Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
Abstract Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied. Schottky-barrier heights of NiSi2layers grown under ultrahigh-vacuum conditions on n- type Si(111) are found to be 0.65 and 0.79 eV for type-Aand type-Bepitaxial systems, respectively. These results are compared with the proposed theoretical models of Schottky barriers.
Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
Abstract Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied. Schottky-barrier heights of NiSi2layers grown under ultrahigh-vacuum conditions on n- type Si(111) are found to be 0.65 and 0.79 eV for type-Aand type-Bepitaxial systems, respectively. These results are compared with the proposed theoretical models of Schottky barriers.
Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
Tung, R. T. (Autor:in)
01.01.1990
4 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
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