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First-Principles Calculations of Quasiparticle Energies at Surfaces and Interfaces: Semiconductor Surface-State Spectra and Band Offsets

Louie, S. G.

Abstract A first-principles theory for calculating surface-state energies and semiconductor band offsets is described. Within a quasiparticle interpretation of excitation spectra, the approach provides well-founded energies which can be compared directly with spectroscopic measurements. Results for the As-capped Si(111) and Ge(111) surfaces and for the GaAs-AlAs(001) heterojunction are discussed and compared with experiment.

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First-Principles Calculations of Quasiparticle Energies at Surfaces and Interfaces: Semiconductor Surface-State Spectra and Band Offsets

Louie, S. G.

Abstract A first-principles theory for calculating surface-state energies and semiconductor band offsets is described. Within a quasiparticle interpretation of excitation spectra, the approach provides well-founded energies which can be compared directly with spectroscopic measurements. Results for the As-capped Si(111) and Ge(111) surfaces and for the GaAs-AlAs(001) heterojunction are discussed and compared with experiment.

First-Principles Calculations of Quasiparticle Energies at Surfaces and Interfaces: Semiconductor Surface-State Spectra and Band Offsets

Louie, S. G.

Abstract A first-principles theory for calculating surface-state energies and semiconductor band offsets is described. Within a quasiparticle interpretation of excitation spectra, the approach provides well-founded energies which can be compared directly with spectroscopic measurements. Results for the As-capped Si(111) and Ge(111) surfaces and for the GaAs-AlAs(001) heterojunction are discussed and compared with experiment.

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Titel:

First-Principles Calculations of Quasiparticle Energies at Surfaces and Interfaces: Semiconductor Surface-State Spectra and Band Offsets

Beteiligte:

Louie, S. G. (Autor:in)

Erschienen in:

Solvay Conference on Surface Science ; 399-406

Springer Series in Surface Sciences ; 14

Erscheinungsdatum:

01.01.1988

Format / Umfang:

8 pages

ISBN:

978-3-642-74220-0 , 978-3-642-74218-7

ISSN:

DOI:

https://doi.org/10.1007/978-3-642-74218-7_35

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Valence Band , Band Offset , Quasiparticle Energy , Aluminium Arsenide , Recent Scanning Tunneling Microscopy Physics , Surface and Interface Science, Thin Films , Surfaces and Interfaces, Thin Films

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