Switching of Band Bending at the Nonreactive CsO<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>/GaAs(l10) Interface: Fid-Bau Portal

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Switching of Band Bending at the Nonreactive CsO x /GaAs(l10) Interface

Laubschat, C. / Prietsch, M. / Domke, M. / Weschke, E. / Remmers, G. / Mandel, T. / Ortega, J. E. / Kaindl, G.

Abstract The behavior of band bending in nonreactive interfaces between thin CsO x films and GaAs(llO) is studied by photoemission. Successive cesium and oxygen exposures change the CsO x stoichiometry in a way that leads to a back-and-forth switching of overlayer metallicity and band bending. For both n- and p-type GaAsO 10), oxygen-rich nonmetallic overlayers create almost flat-band conditions, while cesiumrich metallic overlayers result in Fermi-level positions close to midgap. These observations demonstrate the dominant influence of metal-induced gap states in nonreactive metal-semiconductor interfaces.

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Switching of Band Bending at the Nonreactive CsO x /GaAs(l10) Interface

Laubschat, C. / Prietsch, M. / Domke, M. / Weschke, E. / Remmers, G. / Mandel, T. / Ortega, J. E. / Kaindl, G.

Abstract The behavior of band bending in nonreactive interfaces between thin CsO x films and GaAs(llO) is studied by photoemission. Successive cesium and oxygen exposures change the CsO x stoichiometry in a way that leads to a back-and-forth switching of overlayer metallicity and band bending. For both n- and p-type GaAsO 10), oxygen-rich nonmetallic overlayers create almost flat-band conditions, while cesiumrich metallic overlayers result in Fermi-level positions close to midgap. These observations demonstrate the dominant influence of metal-induced gap states in nonreactive metal-semiconductor interfaces.

Switching of Band Bending at the Nonreactive CsO x /GaAs(l10) Interface

Laubschat, C. / Prietsch, M. / Domke, M. / Weschke, E. / Remmers, G. / Mandel, T. / Ortega, J. E. / Kaindl, G.

Abstract The behavior of band bending in nonreactive interfaces between thin CsO x films and GaAs(llO) is studied by photoemission. Successive cesium and oxygen exposures change the CsO x stoichiometry in a way that leads to a back-and-forth switching of overlayer metallicity and band bending. For both n- and p-type GaAsO 10), oxygen-rich nonmetallic overlayers create almost flat-band conditions, while cesiumrich metallic overlayers result in Fermi-level positions close to midgap. These observations demonstrate the dominant influence of metal-induced gap states in nonreactive metal-semiconductor interfaces.

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Titel:

Switching of Band Bending at the Nonreactive CsO x /GaAs(l10) Interface

Beteiligte:

Laubschat, C. (Autor:in) / Prietsch, M. (Autor:in) / Domke, M. (Autor:in) / Weschke, E. (Autor:in) / Remmers, G. (Autor:in) / Mandel, T. (Autor:in) / Ortega, J. E. (Autor:in) / Kaindl, G. (Autor:in)

Erschienen in:

Electronic Structure of Metal-Semiconductor Contacts ; 280-283

Perspectives in Condensed Matter Physics ; 4

Erscheinungsdatum:

01.01.1990

Format / Umfang:

4 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_40

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Defect State , Physical Review Letter , Oxygen Exposure , Successive Deposition , Band Bending Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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