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Thin Film Preparation and Device Applications of Epitaxial MgO/NbN Multilayers

Hamasaki, K. / Irie, A. / Wang, Z. / Yamashita, T. / Watanabe, K.

Abstract Many problems fundamental to the preparation of high quality Josephson junctions are strongly related to interface morphology in the superconducting electrodes and the insulator layer. One of the problems for NbN films is that the superconducting coherence length, ξ, of NbN is at least a factor of 2 lower than for Nb. For NbN and Nb, ξ (4.2 K) is 4–7 nm and 10–30 nm, respectively.1 Another problem is that the NbN films are often inhomogeneous, and their properties are very sensitive to film preparation conditions. Variations in grain size, crystalline orientation, voids and columnar growth all contribute to changes in the electrical properties of the films.

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Thin Film Preparation and Device Applications of Epitaxial MgO/NbN Multilayers

Hamasaki, K. / Irie, A. / Wang, Z. / Yamashita, T. / Watanabe, K.

Abstract Many problems fundamental to the preparation of high quality Josephson junctions are strongly related to interface morphology in the superconducting electrodes and the insulator layer. One of the problems for NbN films is that the superconducting coherence length, ξ, of NbN is at least a factor of 2 lower than for Nb. For NbN and Nb, ξ (4.2 K) is 4–7 nm and 10–30 nm, respectively.1 Another problem is that the NbN films are often inhomogeneous, and their properties are very sensitive to film preparation conditions. Variations in grain size, crystalline orientation, voids and columnar growth all contribute to changes in the electrical properties of the films.

Thin Film Preparation and Device Applications of Epitaxial MgO/NbN Multilayers

Hamasaki, K. / Irie, A. / Wang, Z. / Yamashita, T. / Watanabe, K.

Abstract Many problems fundamental to the preparation of high quality Josephson junctions are strongly related to interface morphology in the superconducting electrodes and the insulator layer. One of the problems for NbN films is that the superconducting coherence length, ξ, of NbN is at least a factor of 2 lower than for Nb. For NbN and Nb, ξ (4.2 K) is 4–7 nm and 10–30 nm, respectively.1 Another problem is that the NbN films are often inhomogeneous, and their properties are very sensitive to film preparation conditions. Variations in grain size, crystalline orientation, voids and columnar growth all contribute to changes in the electrical properties of the films.

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Titel:

Thin Film Preparation and Device Applications of Epitaxial MgO/NbN Multilayers

Beteiligte:

Hamasaki, K. (Autor:in) / Irie, A. (Autor:in) / Wang, Z. (Autor:in) / Yamashita, T. (Autor:in) / Watanabe, K. (Autor:in)

Erschienen in:

Advances in Cryogenic Engineering Materials ; 377-383

An International Cryogenic Materials Conference Publication ; 36

Erscheinungsdatum:

01.01.1990

Format / Umfang:

7 pages

ISBN:

978-1-4613-9882-0 , 978-1-4613-9880-6

ISSN:

DOI:

https://doi.org/10.1007/978-1-4613-9880-6_49

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Josephson Junction , Tunnel Junction , Tunnel Barrier , Small Void , Interface Morphology Chemistry , Biochemical Engineering , Characterization and Evaluation of Materials , Mechanical Engineering

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