Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Transition in Schottky Barrier Formation with Chemical Reactivity
Abstract Low-energy electron-loss spectra reveal that a majority of common metals react with CdS, CdSe, and most other covalent semiconductors. Furthermore, barrier heights of metals on individual compound semiconductors exhibit a sharp transition as a function of heat of reaction, increasing dramatically above an experimentally determined critical heat of reaction.
Transition in Schottky Barrier Formation with Chemical Reactivity
Abstract Low-energy electron-loss spectra reveal that a majority of common metals react with CdS, CdSe, and most other covalent semiconductors. Furthermore, barrier heights of metals on individual compound semiconductors exhibit a sharp transition as a function of heat of reaction, increasing dramatically above an experimentally determined critical heat of reaction.
Transition in Schottky Barrier Formation with Chemical Reactivity
Brillson, L. J. (Autor:in)
01.01.1990
4 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
Reactivity and control of III-V surfaces for passivation and Schottky barrier formation
| British Library Online Contents | 2004
Schottky barrier formation for passivated semiconductor surfaces
| British Library Online Contents | 1996
Diffusion, Interface Mixing and Schottky Barrier Formation
| British Library Online Contents | 1994
Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity
| British Library Online Contents | 2004
Screening and delocalization effects in Schottky barrier formation
| Springer Verlag | 1990