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Room Temperature Silicon Spin-Based Transistors

Cahay, M. / Bandyopadhyay, S.

Abstract In this review article, we provide a brief overview of current research in the field of silicon spin-based transistors operating at room temperature. This field has branched into two distinct efforts: the first aimed at developing new types of silicon transistors where spin transport, in conjunction with charge transport, is utilized to realize or augment device operation, and the second focused on improving the performance and functionality of complementary metal oxide silicon devices. In this work, we provide a synopsis of these ideas and conclude with a short term prognosis.

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Room Temperature Silicon Spin-Based Transistors

Cahay, M. / Bandyopadhyay, S.

Abstract In this review article, we provide a brief overview of current research in the field of silicon spin-based transistors operating at room temperature. This field has branched into two distinct efforts: the first aimed at developing new types of silicon transistors where spin transport, in conjunction with charge transport, is utilized to realize or augment device operation, and the second focused on improving the performance and functionality of complementary metal oxide silicon devices. In this work, we provide a synopsis of these ideas and conclude with a short term prognosis.

Room Temperature Silicon Spin-Based Transistors

Cahay, M. / Bandyopadhyay, S.

Abstract In this review article, we provide a brief overview of current research in the field of silicon spin-based transistors operating at room temperature. This field has branched into two distinct efforts: the first aimed at developing new types of silicon transistors where spin transport, in conjunction with charge transport, is utilized to realize or augment device operation, and the second focused on improving the performance and functionality of complementary metal oxide silicon devices. In this work, we provide a synopsis of these ideas and conclude with a short term prognosis.

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Titel:

Room Temperature Silicon Spin-Based Transistors

Beteiligte:

Cahay, M. (Autor:in) / Bandyopadhyay, S. (Autor:in)

Erschienen in:

Device Applications of Silicon Nanocrystals and Nanostructures ; 173-194

Nanostructure Science and Technology

Erscheinungsdatum:

01.01.2009

Format / Umfang:

22 pages

ISBN:

978-0-387-78689-6 , 978-0-387-78688-9

ISSN:

DOI:

https://doi.org/10.1007/978-0-387-78689-6_6

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Material Science , Nanotechnology , Optical and Electronic Materials , Superconductivity, Superfluidity, Quantum Fluids , Room Temperature Silicon Spin-Based Transistors

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