Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Surface Segregation at Metal/III-V Compound Semiconductor Interfaces
Abstract This paper focuses on the interesting observation that semiconductor atoms segregate to the free surface for many evolving metal/semiconductor interfaces. Their presence contributes to a range of intriguing properties of interfaces and their study offers insight into complicated interface behavior. The purpose of this paper is to develop a simple model for surface segregation for evolving metal/semiconductor interfaces. The starting point for this modeling is recent theories developed to qualitatively interpret grain-boundary segregation and surface segregation on alloy systems. As we will show, our approach will yield excellent agreement when compared with the wealth of experimental information available in the literature, including our own experimental results and those of others. We focus on interfaces grown under the cleanest of conditions. We do not summarize the large device literature because devices are grown under less controlled conditions and the presence of impurities will alter the atom distribution.
Surface Segregation at Metal/III-V Compound Semiconductor Interfaces
Abstract This paper focuses on the interesting observation that semiconductor atoms segregate to the free surface for many evolving metal/semiconductor interfaces. Their presence contributes to a range of intriguing properties of interfaces and their study offers insight into complicated interface behavior. The purpose of this paper is to develop a simple model for surface segregation for evolving metal/semiconductor interfaces. The starting point for this modeling is recent theories developed to qualitatively interpret grain-boundary segregation and surface segregation on alloy systems. As we will show, our approach will yield excellent agreement when compared with the wealth of experimental information available in the literature, including our own experimental results and those of others. We focus on interfaces grown under the cleanest of conditions. We do not summarize the large device literature because devices are grown under less controlled conditions and the presence of impurities will alter the atom distribution.
Surface Segregation at Metal/III-V Compound Semiconductor Interfaces
Lin, Zhangda (Autor:in) / Xu, F. (Autor:in) / Weaver, J. H. (Autor:in)
01.01.1988
10 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
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