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Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor
Molybdenum disulfide (MoS2) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS2 tribotronic phototransistor is developed by a conjunction of a MoS2 phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS2 phototransistor act as a “gate” to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W−1 at the 100 mW cm−2 UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.
Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor
Molybdenum disulfide (MoS2) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS2 tribotronic phototransistor is developed by a conjunction of a MoS2 phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS2 phototransistor act as a “gate” to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W−1 at the 100 mW cm−2 UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.
Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor
Pang, Yaokun (Autor:in) / Xue, Fei (Autor:in) / Wang, Longfei (Autor:in) / Chen, Jian (Autor:in) / Luo, Jianjun (Autor:in) / Jiang, Tao (Autor:in) / Zhang, Chi (Autor:in) / Wang, Zhong Lin (Autor:in)
Advanced Science ; 3
01.06.2016
7 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity
| Wiley | 2018
| British Library Online Contents | 2014
| Wiley | 2024
| British Library Online Contents | 2014
| Wiley | 2024