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Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3
The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high‐efficiency electronic devices. Here, carrier transport behavior mediated by the electron‐phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron‐phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi‐ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron‐phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.
Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3
The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high‐efficiency electronic devices. Here, carrier transport behavior mediated by the electron‐phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron‐phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi‐ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron‐phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.
Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3
Ou, Zhenwei (Autor:in) / Peng, Bin (Autor:in) / Chu, Weibin (Autor:in) / Li, Zhe (Autor:in) / Wang, Cheng (Autor:in) / Zeng, Yan (Autor:in) / Chen, Hongyi (Autor:in) / Wang, Qiuyu (Autor:in) / Dong, Guohua (Autor:in) / Wu, Yongyi (Autor:in)
Advanced Science ; 10
01.08.2023
9 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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