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    Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells

    New search for: Harris, C. I.
    New search for: Monemar, B.
    New search for: Holtz, P. O.
    New search for: Sundaram, M.
    New search for: Taguchi, T.

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    Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells

    New search for: Harris, C. I.
    New search for: Monemar, B.
    New search for: Holtz, P. O.
    New search for: Sundaram, M.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells

    New search for: Harris, C. I.
    New search for: Monemar, B.
    New search for: Holtz, P. O.
    New search for: Sundaram, M.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells

    Contributors:

    Harris, C. I. (author) / Monemar, B. (author) / Holtz, P. O. (author) / Sundaram, M. (author) / Taguchi, T.

    Published in:

    Shallow Impurities in Semiconductors ; 285

    MATERIALS SCIENCE FORUM

    Publication date:

    1993-01-01

    Size:

    285 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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