A platform for research: civil engineering, architecture and urbanism
Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells
Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells
Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells
Harris, C. I. (author) / Monemar, B. (author) / Holtz, P. O. (author) / Sundaram, M. (author) / Taguchi, T.
1993-01-01
285 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Quantum interference effect in GaAs/AlGaAs double quantum wells
British Library Online Contents | 1995
|Exciton Localization in ZnSe-Based Quantum Wells
British Library Online Contents | 1995
|Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells
British Library Online Contents | 2005
|Diffused GaAs/AlGaAs quantum wells with equidistant electronic states
British Library Online Contents | 2002
|Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
British Library Online Contents | 1993
|