A platform for research: civil engineering, architecture and urbanism
Failure mechanism of chromium-silicon-oxide resistive films stressed by electric pulse loading
Failure mechanism of chromium-silicon-oxide resistive films stressed by electric pulse loading
Failure mechanism of chromium-silicon-oxide resistive films stressed by electric pulse loading
Sato, K. (author) / Nagata, T. (author) / Watanabe, M. (author) / Nakayama, H. (author)
JOURNAL OF MATERIALS SCIENCE ; 28 ; 2955
1993-01-01
2955 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Microstructure and growth mechanism of stressed complex oxide thin films in strain-modulation
British Library Online Contents | 2006
|Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions
British Library Online Contents | 2012
|Transport mechanism in high resistive silicon carbide heterostructures
British Library Online Contents | 2001
|Chromium-doped titanium oxide thin films
British Library Online Contents | 2005
|Limiting stressed state and failure of clays
Online Contents | 1973
|