A platform for research: civil engineering, architecture and urbanism
Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors
Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors
Theoretical Study of the Polar and Non-Polar Interfaces of Grain Boundaries in Compound Semiconductors
Kohyama, M. (author) / Kose, S. (author) / Yamamoto, R. (author) / Komninou, P. / Rocher, A.
1993-01-01
81 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Theoretical investigation on the electronic states localized at grain boundaries in semiconductors
British Library Online Contents | 2002
|Electrical Properties of Grain Boundaries in Ceramic Semiconductors
British Library Online Contents | 1997
|Mobility control of ceramic grain boundaries and interfaces
British Library Online Contents | 1993
|Shear localization in simple grain skeletons with polar effects
British Library Conference Proceedings | 1998
|Computational study of Mn-doped GaN polar and non-polar surfaces
British Library Online Contents | 2018
|