A platform for research: civil engineering, architecture and urbanism
Optimization of growth parameters of short period InGaAs/InP superlattices for Wannier-Stark modulators
Optimization of growth parameters of short period InGaAs/InP superlattices for Wannier-Stark modulators
Optimization of growth parameters of short period InGaAs/InP superlattices for Wannier-Stark modulators
Rigo, C. (author) / Campi, D. (author) / Neitzert, H. C. (author) / Soldani, D. (author) / Fornani, R.
1994-01-01
305 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Raman scattering analysis of InGaAs/AlAsSb short-period superlattices
British Library Online Contents | 2000
|Wannier-Stark Localization Effects in 6H-SiC JFETs
British Library Online Contents | 2005
|Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC
British Library Online Contents | 2006
|Gas source MEE growth of InGaAs/InP superlattices
British Library Online Contents | 1992
|British Library Conference Proceedings | 2000
|