Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures: Fid-Bau Portal

Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures

Ferrari, C. / Franzosi, P. / Lazzarini, L. / Salviati, G.

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Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures

Ferrari, C. / Franzosi, P. / Lazzarini, L. / Salviati, G.

Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures

Ferrari, C. / Franzosi, P. / Lazzarini, L. / Salviati, G.

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Document information

Title:

Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures

Contributors:

Ferrari, C. (author) / Franzosi, P. (author) / Lazzarini, L. (author) / Salviati, G. (author) / Fornani, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 510

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

510 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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