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Study on InP Doped with Sulphur by Positron Annihilation

Huang, M.-R. / Wang, Y.-Y. / Yang, J.-H. / He, Y.-S.

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Study on InP Doped with Sulphur by Positron Annihilation

Huang, M.-R. / Wang, Y.-Y. / Yang, J.-H. / He, Y.-S.

Study on InP Doped with Sulphur by Positron Annihilation

Huang, M.-R. / Wang, Y.-Y. / Yang, J.-H. / He, Y.-S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Study on InP Doped with Sulphur by Positron Annihilation

Contributors:

Huang, M.-R. (author) / Wang, Y.-Y. (author) / Yang, J.-H. (author) / He, Y.-S. (author) / He, Y.-J. / Cao, B.-S. / Jean, Y. C.

Published in:

Positron Annihilation ICPA-10 ; 383

MATERIALS SCIENCE FORUM

Publication date:

1995-01-01

Size:

383 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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