Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells: Fid-Bau Portal

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. / Aulombard, R.

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Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. / Aulombard, R.

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. / Aulombard, R.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Contributors:

Zhang, X. (author) / Briot, O. (author) / Gil, B. (author) / Aulombard, R. (author) / Henini, M. / Szweda, R.

Published in:

Low Dimensional Structures and Devices ; 184-187

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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