Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer: Fid-Bau Portal

Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer

Reqqass, H. / Lacharme, J.-P. / Sebenne, C. A. / Eddrief, M. / Le Thanh, V.

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Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer

Reqqass, H. / Lacharme, J.-P. / Sebenne, C. A. / Eddrief, M. / Le Thanh, V.

Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer

Reqqass, H. / Lacharme, J.-P. / Sebenne, C. A. / Eddrief, M. / Le Thanh, V.

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Title:

Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer

Contributors:

Reqqass, H. (author) / Lacharme, J.-P. (author) / Sebenne, C. A. (author) / Eddrief, M. (author) / Le Thanh, V. (author)

Published in:

APPLIED SURFACE SCIENCE ; 92 ; 357-361

Publication date:

1996-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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