Formation of bottom oxides in porous silicon films by anodic oxidation: Fid-Bau Portal

Formation of bottom oxides in porous silicon films by anodic oxidation

Lee, C. H. / Yeh, C. C. / Hsu, K. Y. J.

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Formation of bottom oxides in porous silicon films by anodic oxidation

Lee, C. H. / Yeh, C. C. / Hsu, K. Y. J.

Formation of bottom oxides in porous silicon films by anodic oxidation

Lee, C. H. / Yeh, C. C. / Hsu, K. Y. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Formation of bottom oxides in porous silicon films by anodic oxidation

Contributors:

Lee, C. H. (author) / Yeh, C. C. (author) / Hsu, K. Y. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 92 ; 621-625

Publication date:

1996-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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