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GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Hasegawa, Y. / Egawa, T. / Jimbo, T. / Umeno, M.

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GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Hasegawa, Y. / Egawa, T. / Jimbo, T. / Umeno, M.

GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Hasegawa, Y. / Egawa, T. / Jimbo, T. / Umeno, M.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Contributors:

Hasegawa, Y. (author) / Egawa, T. (author) / Jimbo, T. (author) / Umeno, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 99 ; 482-486

Publication date:

1996-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Hasegawa, Y. / Egawa, T. / Jimbo, T. et al. | British Library Online Contents | 1996

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