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A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature
A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature
A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature
Chen, B.-Y. (author) / Chen, J.-R. (author) / Jenq, F.-L. (author) / Hong, C.-S. (author)
APPLIED SURFACE SCIENCE ; 99 ; 601-606
1996-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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