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Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

Ali, I. / Muret, P. / Nguyen Tan, T. A.

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Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

Ali, I. / Muret, P. / Nguyen Tan, T. A.

Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

Ali, I. / Muret, P. / Nguyen Tan, T. A.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

Contributors:

Ali, I. (author) / Muret, P. (author) / Nguyen Tan, T. A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 102 ; 147-150

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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