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CBE-grown high-quality GaAs on Si substrate

Uchida, H. / Adachi, M. / Nishikawa, H. / Egawa, T. / Jimbo, T. / Umeno, M.

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CBE-grown high-quality GaAs on Si substrate

Uchida, H. / Adachi, M. / Nishikawa, H. / Egawa, T. / Jimbo, T. / Umeno, M.

CBE-grown high-quality GaAs on Si substrate

Uchida, H. / Adachi, M. / Nishikawa, H. / Egawa, T. / Jimbo, T. / Umeno, M.

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Check availability in my library

Order at Subito €

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Document information

Title:

CBE-grown high-quality GaAs on Si substrate

Contributors:

Uchida, H. (author) / Adachi, M. (author) / Nishikawa, H. (author) / Egawa, T. (author) / Jimbo, T. (author) / Umeno, M. (author) / Feldman, L. C. / Nishizawa, J. / Van der Weg, W. F.

Published in:

A journal devoted to applied physics and chemistry of surfaces and interfaces ; 399-402

APPLIED SURFACE SCIENCE ; 100/101

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Uchida, H. / Adachi, M. / Nishikawa, H. et al. | British Library Online Contents | 1996

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