A platform for research: civil engineering, architecture and urbanism
EPR and ENDOR of Defects in Silicon Carbide
EPR and ENDOR of Defects in Silicon Carbide
EPR and ENDOR of Defects in Silicon Carbide
Spaeth, J.-M. (author) / Greulich-Weber, S. (author) / Maerz, M. (author) / Reinke, J. (author) / Feege, M. (author) / Kalbukhova, E. N. (author) / Lukin, S. N. (author)
MATERIALS SCIENCE FORUM ; 149-154
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
British Library Online Contents | 1998
|Characterisation and Defects in Silicon Carbide
British Library Online Contents | 2002
|Intrinsic Defects in Silicon Carbide Polytypes
British Library Online Contents | 2001
|Growth of silicon carbide: process-related defects
British Library Online Contents | 2001
|Defects and Ion-Solid Interactions in Silicon Carbide
British Library Online Contents | 2005
|