A platform for research: civil engineering, architecture and urbanism
Growth and characterization of AlInAs on InP substrate by molecular beam epitaxy
RARE METALS -BEIJING- ENGLISH EDITION ; 13 ; 118-121
1994-01-01
4 pages
Article (Journal)
English
DDC:
669
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2018
|Molecular beam epitaxy growth of nitride materials
British Library Online Contents | 1999
|Growth Kinetics of Silicon Molecular Beam Epitaxy
Springer Verlag | 1988
|Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
British Library Online Contents | 2002
|Growth models for virtual molecular beam epitaxy
British Library Online Contents | 1996
|