Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients: Fid-Bau Portal

Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients

Goelz, A. / Gross, S. / Janssen, R. / Von Kamienski, E. S. / Kurz, H.

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Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients

Goelz, A. / Gross, S. / Janssen, R. / Von Kamienski, E. S. / Kurz, H.

Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients

Goelz, A. / Gross, S. / Janssen, R. / Von Kamienski, E. S. / Kurz, H.

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Document information

Title:

Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients

Contributors:

Goelz, A. (author) / Gross, S. (author) / Janssen, R. (author) / Von Kamienski, E. S. (author) / Kurz, H. (author) / Camassel, J. / Fricke, K. / Krozer, V. / Robert, J. L.

Published in:

High Temperature Electronics: Materials, Devices and Applications ; 363-365

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 46

Publication date:

1997-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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