Electrical properties of ferroelectric BaMgF~4 films grown on GaAs substrates using AlGaAs buffer layer: Fid-Bau Portal

Electrical properties of ferroelectric BaMgF~4 films grown on GaAs substrates using AlGaAs buffer layer

Hayashi, T. / Yoshihara, M. / Ohmi, S.-I. / Tokumitsu, E. / Ishiwara, H.

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Electrical properties of ferroelectric BaMgF~4 films grown on GaAs substrates using AlGaAs buffer layer

Hayashi, T. / Yoshihara, M. / Ohmi, S.-I. / Tokumitsu, E. / Ishiwara, H.

Electrical properties of ferroelectric BaMgF~4 films grown on GaAs substrates using AlGaAs buffer layer

Hayashi, T. / Yoshihara, M. / Ohmi, S.-I. / Tokumitsu, E. / Ishiwara, H.

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Document information

Title:

Electrical properties of ferroelectric BaMgF~4 films grown on GaAs substrates using AlGaAs buffer layer

Contributors:

Hayashi, T. (author) / Yoshihara, M. (author) / Ohmi, S.-I. (author) / Tokumitsu, E. (author) / Ishiwara, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 117/118 ; 418-422

Publication date:

1997-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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