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Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
Ohshima, T. (author) / Uedono, A. (author) / Itoh, H. (author) / Abe, K. (author) / Suzuki, R. (author) / Ohdaira, T. (author) / Aoki, Y. (author) / Yoshikawa, M. (author) / Mikado, T. (author) / Okumura, H. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 745-748
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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