A platform for research: civil engineering, architecture and urbanism
A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
Schoen, K. J. (author) / Henning, J. P. (author) / Woodall, J. M. (author) / Cooper, J. A. (author) / Melloch, M. R. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 945-948
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
British Library Online Contents | 2013
|4H-SiC Trench Structure Schottky Diodes
British Library Online Contents | 2012
|10 kV Silicon Carbide Junction Barrier Schottky Rectifier
British Library Online Contents | 2009
|4H-SiC Trench Schottky Diodes for Next Generation Products
British Library Online Contents | 2013
|Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
British Library Online Contents | 2002
|