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A deep photoluminescence band in 4H SiC related to the silicon vacancy

Soerman, E. / Son, N. T. / Chen, W. M. / Hallin, C. / Lindstroem, J. L. / Janzen, E.

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A deep photoluminescence band in 4H SiC related to the silicon vacancy

Soerman, E. / Son, N. T. / Chen, W. M. / Hallin, C. / Lindstroem, J. L. / Janzen, E.

A deep photoluminescence band in 4H SiC related to the silicon vacancy

Soerman, E. / Son, N. T. / Chen, W. M. / Hallin, C. / Lindstroem, J. L. / Janzen, E.

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Document information

Title:

A deep photoluminescence band in 4H SiC related to the silicon vacancy

Contributors:

Soerman, E. (author) / Son, N. T. (author) / Chen, W. M. (author) / Hallin, C. (author) / Lindstroem, J. L. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 258/263 ; 685-690

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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