A platform for research: civil engineering, architecture and urbanism
Enlargement of SiC Crystals: Defect Formation at the Interfaces
Enlargement of SiC Crystals: Defect Formation at the Interfaces
Enlargement of SiC Crystals: Defect Formation at the Interfaces
Anikin, M. (author) / Pons, M. (author) / Chourou, K. (author) / Chaix, O. (author) / Bluet, J. M. (author) / Lauer, V. (author) / Madar, R. (author) / Pensl, G. / Morkoc, H. / Monemar, B.
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Lateral Enlargement of Silicon Carbide Crystals
British Library Online Contents | 2002
|MECHANISED ENLARGEMENT - On-line renewal and enlargement
Online Contents | 2012
Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
British Library Online Contents | 1997
|British Library Conference Proceedings | 1999
|Fermi level-dependent defect formation at Cu(In,Ga)Se2 interfaces
British Library Online Contents | 2000
|