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    Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide

    New search for: Mickevicius, R.
    New search for: Zhao, J. H.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Jansen, E.

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    Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide

    New search for: Mickevicius, R.
    New search for: Zhao, J. H.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Jansen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide

    New search for: Mickevicius, R.
    New search for: Zhao, J. H.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Jansen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide

    Contributors:

    Mickevicius, R. (author) / Zhao, J. H. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Jansen, E.

    Published in:

    Silicon Carbide, III-Nitrides and Related Materials ; 291-294

    MATERIALS SCIENCE FORUM ; 264/268

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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