The Neutral Silicon Vacancy in 6H and 4H SiC: Fid-Bau Portal

The Neutral Silicon Vacancy in 6H and 4H SiC

Soerman, E. / Chen, W. M. / Son, N. T. / Hallin, C. / Lindstroem, J. L. / Monemar, B. / Janzen, E.

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The Neutral Silicon Vacancy in 6H and 4H SiC

Soerman, E. / Chen, W. M. / Son, N. T. / Hallin, C. / Lindstroem, J. L. / Monemar, B. / Janzen, E.

The Neutral Silicon Vacancy in 6H and 4H SiC

Soerman, E. / Chen, W. M. / Son, N. T. / Hallin, C. / Lindstroem, J. L. / Monemar, B. / Janzen, E.

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Title:

The Neutral Silicon Vacancy in 6H and 4H SiC

Contributors:

Soerman, E. (author) / Chen, W. M. (author) / Son, N. T. (author) / Hallin, C. (author) / Lindstroem, J. L. (author) / Monemar, B. (author) / Janzen, E. (author) / Pensl, G. / Morkoc, H. / Monemar, B.

Published in:

Silicon Carbide, III-Nitrides and Related Materials ; 473-476

MATERIALS SCIENCE FORUM ; 264/268

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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