Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures: Fid-Bau Portal

Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

Sobolev, N. A. / Emel'yanov, A. M. / Nikolaev, Y. A. / Shtel'makh, K. F. / Kudryavtsev, Y. / Sakharov, V. I. / Serenkov, I. T. / Makovijchuk, M. I. / Parshin, E. O.

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Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

Sobolev, N. A. / Emel'yanov, A. M. / Nikolaev, Y. A. / Shtel'makh, K. F. / Kudryavtsev, Y. / Sakharov, V. I. / Serenkov, I. T. / Makovijchuk, M. I. / Parshin, E. O.

Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

Sobolev, N. A. / Emel'yanov, A. M. / Nikolaev, Y. A. / Shtel'makh, K. F. / Kudryavtsev, Y. / Sakharov, V. I. / Serenkov, I. T. / Makovijchuk, M. I. / Parshin, E. O.

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Title:

Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

Contributors:

Sobolev, N. A. (author) / Emel'yanov, A. M. (author) / Nikolaev, Y. A. (author) / Shtel'makh, K. F. (author) / Kudryavtsev, Y. (author) / Sakharov, V. I. (author) / Serenkov, I. T. (author) / Makovijchuk, M. I. (author) / Parshin, E. O. (author) / Davies, G.

Published in:

Defects in Semiconductors ICDS-19 ; 1527-1532

MATERIALS SCIENCE FORUM ; 258/263

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Mid-infrared induced quenching of photoluminescence in Si:Er

Forcales, M. / Bradley, I. V. / Wells, J. P. et al. | British Library Online Contents | 2001

Photoluminescence from Si:Er under front and backside excitation

Pawlak, B. J. / Gregorkiewicz, T. | British Library Online Contents | 2001

Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Shmagin, V. B. / Lyutov, A. V. / Remizov, D. Y. et al. | British Library Online Contents | 2008