A platform for research: civil engineering, architecture and urbanism
Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
Nguyen Hong Ky (author) / Davies, G. / Nazare, M. H.
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effects of Background Doping Level on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
British Library Online Contents | 1995
|Photorefractive AlGaAs/GaAs multiple quantum well structures: growth and optical studies [2896-535]
British Library Conference Proceedings | 1996
|Defect formation during laser induced intermixing of GaAs/AlGaAs multiple-quantum-well structures
British Library Online Contents | 1997
|Effect of temperature on GaAs/AlGaAs multiple quantum well solar cells
British Library Online Contents | 1998
|Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures
British Library Online Contents | 1997
|