Recombination centers in electron irradiated Si and GaAs: Fid-Bau Portal

Recombination centers in electron irradiated Si and GaAs

Bourgoin, J. C. / Zazoui, M. / Zaidi, M. A.

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Recombination centers in electron irradiated Si and GaAs

Bourgoin, J. C. / Zazoui, M. / Zaidi, M. A.

Recombination centers in electron irradiated Si and GaAs

Bourgoin, J. C. / Zazoui, M. / Zaidi, M. A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Recombination centers in electron irradiated Si and GaAs

Contributors:

Bourgoin, J. C. (author) / Zazoui, M. (author) / Zaidi, M. A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 258/263 ; 629-634

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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