Surface free energy modification of CaF~2 by atomic-height island formation on heteroepitaxy of GaAs on CaF~2: Fid-Bau Portal

Surface free energy modification of CaF~2 by atomic-height island formation on heteroepitaxy of GaAs on CaF~2

Kawasaki, K. / Tsutsui, K.

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Surface free energy modification of CaF~2 by atomic-height island formation on heteroepitaxy of GaAs on CaF~2

Kawasaki, K. / Tsutsui, K.

Surface free energy modification of CaF~2 by atomic-height island formation on heteroepitaxy of GaAs on CaF~2

Kawasaki, K. / Tsutsui, K.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Surface free energy modification of CaF~2 by atomic-height island formation on heteroepitaxy of GaAs on CaF~2

Contributors:

Kawasaki, K. (author) / Tsutsui, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 130-132 ; 464-468

Publication date:

1998-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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