Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Prediction of composition of GaInAsSb epilayers by MOCVD using pattern recognition and artificial neural network method

    New search for: Yan, L.
    New search for: Wu, W.
    New search for: Peng, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Prediction of composition of GaInAsSb epilayers by MOCVD using pattern recognition and artificial neural network method

    New search for: Yan, L.
    New search for: Wu, W.
    New search for: Peng, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Prediction of composition of GaInAsSb epilayers by MOCVD using pattern recognition and artificial neural network method

    New search for: Yan, L.
    New search for: Wu, W.
    New search for: Peng, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Prediction of composition of GaInAsSb epilayers by MOCVD using pattern recognition and artificial neural network method

    Contributors:

    Yan, L. (author) / Wu, W. (author) / Peng, R. (author)

    Published in:

    RARE METALS -BEIJING- ENGLISH EDITION ; 17 ; 36-40

    Publication date:

    1998-01-01

    Size:

    5 pages

    ISSN:

    1001-0521

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  669

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD

    Saidi, F. / Hassen, F. / Maaref, H. et al. | British Library Online Contents | 2002

    Be^+ implanted GaInAsSb/GaSb photodiodes

    Perotin, M. / Gouskov, L. / Luquet, H. et al. | British Library Online Contents | 1996

    Microstructure studies of GaInAsSb/GaSb heterostructure

    Ziyang, Z. / Shuwei, L. / Baolin, Z. et al. | British Library Online Contents | 2000

    Combination of IBA Techniques for Composition Analysis of GaInAsSb Films

    Corregidor, V. / Chaves, P. C. / Reis, M. A. et al. | British Library Online Contents | 2006

    Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

    Liu, Jianxun / Liang, Hongwei / Liu, Yang et al. | British Library Online Contents | 2017

    Back to top