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    Intense 1.5 m emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE

    New search for: Nonogaki, Y.
    New search for: Iguchi, T.
    New search for: Fuchi, S.
    New search for: Fujiwara, Y.
    New search for: Takeda, Y.

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    Intense 1.5 m emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE

    New search for: Nonogaki, Y.
    New search for: Iguchi, T.
    New search for: Fuchi, S.
    New search for: Fujiwara, Y.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Intense 1.5 m emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE

    New search for: Nonogaki, Y.
    New search for: Iguchi, T.
    New search for: Fuchi, S.
    New search for: Fujiwara, Y.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Intense 1.5 m emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE

    Contributors:

    Nonogaki, Y. (author) / Iguchi, T. (author) / Fuchi, S. (author) / Fujiwara, Y. (author) / Takeda, Y. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 57 ; 86-88

    Publication date:

    1998-01-01

    Size:

    3 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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