A platform for research: civil engineering, architecture and urbanism
Relative Stability of Two Structures of the =11 <011> Tilt Grain Boundary in Silicon and Germanium by the Tight-Binding Method
Relative Stability of Two Structures of the =11 <011> Tilt Grain Boundary in Silicon and Germanium by the Tight-Binding Method
Relative Stability of Two Structures of the =11 <011> Tilt Grain Boundary in Silicon and Germanium by the Tight-Binding Method
Chen, J. (author) / Hairie, A. (author) / Nouet, G. (author) / Paumier, E. (author)
MATERIALS SCIENCE FORUM ; 294/296 ; 227-230
1999-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1998
|British Library Online Contents | 1993
|Tight Binding Calculation of Tilt and Twist Boundaries in Silicon
British Library Conference Proceedings | 1993
|Free Energy of the = 11 (332) Tilt Grain Boundary in Silicon
British Library Online Contents | 1993
|HREM Study of Copper Precipitation in a =25 Silicon Tilt Grain Boundary
British Library Online Contents | 1993
|