A platform for research: civil engineering, architecture and urbanism
Population Inversion and Intraband IR Lasing under Hot Electron Intervalley Transfer in GaAs-AlAs Like MQW Heterostructures
Population Inversion and Intraband IR Lasing under Hot Electron Intervalley Transfer in GaAs-AlAs Like MQW Heterostructures
Population Inversion and Intraband IR Lasing under Hot Electron Intervalley Transfer in GaAs-AlAs Like MQW Heterostructures
Aleshkin, V. Y. (author) / Andronov, A. A. (author) / Demidov, E. V. (author)
MATERIALS SCIENCE FORUM ; 297/298 ; 221-224
1999-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Field emission from ZnO whiskers under intervalley electron redistribution
British Library Online Contents | 2012
|British Library Online Contents | 1999
|@C-X electron transfer in GaAs/AlAs type-I superlattices
British Library Online Contents | 1999
|British Library Online Contents | 2002
|Resonant tunneling electron beam source using GaAs/AlAs/GaAs field emitter
British Library Online Contents | 1997
|