Characterization of GaN grown on SiC on Si/SiO~2/Si by metalorganic chemical vapor deposition: Fid-Bau Portal

Characterization of GaN grown on SiC on Si/SiO~2/Si by metalorganic chemical vapor deposition

Zhou, W. L. / Namavar, F. / Colter, P. C. / Yoganathan, M. / Leksono, M. W. / Pankove, J. I.

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Characterization of GaN grown on SiC on Si/SiO~2/Si by metalorganic chemical vapor deposition

Zhou, W. L. / Namavar, F. / Colter, P. C. / Yoganathan, M. / Leksono, M. W. / Pankove, J. I.

Characterization of GaN grown on SiC on Si/SiO~2/Si by metalorganic chemical vapor deposition

Zhou, W. L. / Namavar, F. / Colter, P. C. / Yoganathan, M. / Leksono, M. W. / Pankove, J. I.

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Document information

Title:

Characterization of GaN grown on SiC on Si/SiO~2/Si by metalorganic chemical vapor deposition

Contributors:

Zhou, W. L. (author) / Namavar, F. (author) / Colter, P. C. (author) / Yoganathan, M. (author) / Leksono, M. W. (author) / Pankove, J. I. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 1171-1174

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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